document number: 88504 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated junction rectifier 1n4001gp thru 1n4007gp vishay general semiconductor typical applications for use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes for both consumer and automotive applications. features ? superectifier structure for high reliability application ? cavity-free glass- passivated junction ? low forward voltage drop ? low leakage current, typical i r less than 0.1 a ? high forward surge capability ? meets environmental standard mil-s-19500 ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: do-204al, molded epoxy over glass body molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 cla ss 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes (1) jedec registered values (2) for device using on bridge rectifier application primary characteristics i f(av) 1.0 a v rrm 50 v to 1000 v i fsm (8.3 ms sine-wave) 30 a i fsm (square wave t p = 1 ms) 45 a i r 5.0 a v f 1.1 v t j max. 175 c do-204al (do-41) superectifier ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 1n4001gp 1n4002gp 1n4003gp 1n4004gp 1n4005gp 1n4006gp 1n4007gp unit maximum repe titive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms (1) 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc (1) 50 100 200 400 600 800 1000 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 75 c i f(av) (1) 1.0 a non-repetitive peak forward surge current square waveform t a = 25 c (fig. 3) t p = 1 ms i fsm (1) 45 a t p = 2 ms 35 t p = 5 ms 30 maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length t a = 75 c i r(av) (1) 30 a rating for fusing (t < 8.3 ms) i 2 t (2) 3.7 a 2 s operating junction and storage temperature range t j , t stg (1) - 65 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88504 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 1n4001gp thru 1n4007gp vishay general semiconductor note (1) jedec registered values note (1) thermal resistance from junction to ambient at 0.375" (9 .5 mm) lead length, pcb mounted note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive pe ak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol 1n4001gp 1n4002gp 1n4003gp 1n4004gp 1n4005gp 1n4006gp 1n4007gp unit maximum instantaneous forward voltage 1.0 a v f 1.1 v maximum dc reverse current at rated dc blocking voltage t a = 25 c i r (1) 5.0 a t a = 125 c 50 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 2.0 s typical junction capacitance 4.0 v, 1 mhz c j 8.0 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol 1n4001gp 1n4002gp 1n4003gp 1n4004gp 1n4005gp 1n4006gp 1n4007gp unit typical thermal resistance r ? ja (1) 55 c/w r ? jl (1) 25 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode 1n4004gp-e3/54 0.335 54 5500 13" diam eter paper tape and reel 1n4004gp-e3/73 0.335 73 3000 ammo pack packaging 1n4004gphe3/54 (1) 0.335 54 5500 13" diameter paper tape and reel 1n4004gphe3/73 (1) 0.335 73 3000 ammo pack packaging 0 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 ambient temperature (c) average forward rectied current (a) 60 hz re s i s tive or inductive load 0.375 " (9.5 mm) lead length 5 10 1 100 10 15 20 25 30 number of cycle s at 60 hz peak forwar d s urge current (a) t j = t j max. 8.3 m s s ingle half s ine-wave
document number: 88504 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 1n4001gp thru 1n4007gp vishay general semiconductor fig. 3 - non-repetitive peak forward surge current fig. 4 - typical instantaneous forward characteristics fig. 5 - typical reverse characteristics fig. 6 - typical j unction capacitance fig. 7 - typical transient thermal impedance 50 75 100 50 25 125 30 25 20 15 45 40 35 10 ambient temperature (c) sq uare waveform t p t p = 1 m s t p = 5 m s t p = 2 m s peak forward s urge current (a) 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 25 c pul s e width = 300 s 1 % duty cycle 0 0.01 0.1 1 10 60 80 100 20 40 t j = 25 c t j = 100 c percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) 0.1 10 1 100 1 10 100 rever s e voltage (v) junction capacitanc e (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.01 0.1 10 1 100 0.1 10 100 1 tran s ient thermal imped ance (c/w) t - pul s e duration ( s )
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88504 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 1n4001gp thru 1n4007gp vishay general semiconductor package outline dimensions in inches (millimeters) do-204al (do-41) 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1) 0.107 (2.7) 0.080 (2.0) dia. 0.034 (0.86) 0.028 (0.71) dia. ? lead diameter i s for s ufx e part number s 0.026 (0.66) 0.023 (0.58) note
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